cdbv6-54t/ad/cd/sd/br-g features -low forward voltage drop. -fast switching. -ultra-small surface mount package. -pn junction guard ring for transient and esd protection. -a vailable in lead free version. mechanical data -case: sot -363, molded plastic -case material: ul 94v -0 flammability retardant classification. -t erminals: solderable per mil-std-202, method 208 -marking: orientation: see diagrams below -w eight: 0.006 grams (approx.) -marking: see diagrams below page 1 qw -ba015 smd schottky barrier diode arrays forward current: 0.2a reverse v oltage: 30v rohs device rev :a parameter symbol limits unit parameter conditions symbol min t yp max unit sot -363 dimensions in inches and (millimeters) peak repetitive reverse voltage w orking peak reverse voltage dc blocking voltage forward continuous current (note 1) repetitive peak forward current (note 1) forward surge current (note 1) @t<1.0s power dissipation (note 1) thermal resistance, junction to ambient air (note 1) operation and storage temperature range reverse breakdown voltage (note 2) forward voltage reverse leakage current (note 2) t otal capacitance reverse recovery time 0.087(2.20) 0.071(1.80) 0.053(1.35) 0.045(1.15) 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) 0.014(0.35) 0.006(0.15) 0.004(0.10)max 0.010(0.25)min 0.096(2.45) 0.085(2.15) 0.006(0.15) 0.003(0.08) a 1 c 2 c 2 c 1 c 1 a 2 c 1 a 2 a 2 a 1 a 1 c 2 a c 1 c 2 a 2 a 1 c 1 a c 2 a c 1 c 1 c 2 a 1 a 2 a c 2 c 1 c 2 c 3 a 1 a 2 a 3 cdbv6-54cd-g* marking: kl7 cdbv6-54t -g marking: kla cdbv6-54ad-g* marking: kl6 cdbv6-54sd-g* marking: kl8 cdbv6-54br-g marking: klb * symmetrical configuration, no orientation indicator . v rrm v rwm v r i f i frm i fsm p d r ja t j , t stg 30 200 300 600 200 625 -65 ~ +125 v ma ma ma mw o c/w o c i r =100 a i f =0.1ma i f =1ma i f =10ma i f =30ma i f =100ma v r =25v v r =1.0v , f=1.0mhz i f =i r =10ma to i r =1.0ma, r l =100 v (br)r v f i r c t trr 30 240 320 400 500 1000 2 10 5 v m v a pf ns notes: 1. device mounted on fr-4 pcb, 10.850.062 inch. 2. short duration test pulse used to minimize self-heating ef fect. maximum ratings (at t a=25c unless otherwise noted) electrical characteristics (at t a=25c unless otherwise noted)
electrical characteristic cur ves ( ) cdbv6-54t/ad/cd/sd/br-g page 2 qw -ba015 rev :a fig.2 reverse characteristics 0 . 0 0 1 i r , i n s t a n t a n e o u s r e v e r s e c u r r e n t ( a ) v r , instantaneous reverse v oltage (v) 0 fig.1 forward characteristics i f , i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a ) v f , instantaneous forward v oltage (v) 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 fig.3 capacitance between t erminals characteristics 1 c t , c a p a c i t a n c e b e t w e e n t e r m i n a l s ( p f ) v r , reverse v oltage (v) 1 0 1 0 0 0 5 1 0 1 5 2 0 0 . 1 m 1 m 1 0 m 1 0 0 m 2 0 2 5 3 0 fig.4 power derating curve 0 p d , p o w e r d i s s i p a t i o n ( m w ) t a , ambient t emperature (c) 0 2 4 5 0 7 5 1 0 0 1 2 5 1 0 0 2 0 0 1 0 3 0 0 . 0 1 0 . 1 1 1 0 1 0 0 1 5 0 smd schottky barrier diode arrays 1 o t a 1 2 5 c = o t a =75 c o t a =25 c o t a =0 c o t a =-40 c o 125 c o 75 c o 25 c o 0 c f=1mhz
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